Toshiba, SanDisk break 20nm barrier with 19nm NAND Flash

Memories now drive process technology and NAND Flash is the current main driver. So it’s no surprise that NAND Flash memories are the first to be produced at a process node below 20nm, which is precisely what Toshiba and SanDisk announced last week by unveiling a 64Gbit, 2-bit/cell, Toggle DDR2.0 NAND Flash design using 19nm process technology. Toshiba says that samples are available now and that production is slated for Q3. SanDisk’s announcement also mentions a future 3-bits/cell device using the same process technology.

About sleibson2

EDA360 Evangelist and Marketing Director at Cadence Design Systems (blog at https://eda360insider.wordpress.com/)
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