Memories now drive process technology and NAND Flash is the current main driver. So it’s no surprise that NAND Flash memories are the first to be produced at a process node below 20nm, which is precisely what Toshiba and SanDisk announced last week by unveiling a 64Gbit, 2-bit/cell, Toggle DDR2.0 NAND Flash design using 19nm process technology. Toshiba says that samples are available now and that production is slated for Q3. SanDisk’s announcement also mentions a future 3-bits/cell device using the same process technology.
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