Category Archives: FDSOI

GSA Silicon Summit to highlight cutting-edge IC technologies: 3D IC assembly, FinFETs, and SOI. April 26, Silicon Valley

The Global Semiconductor Alliance (GSA) is sponsoring a half-day event that will drill down into three of the leading-edge IC manufacturing technologies of the coming decade: 3D (and 2.5D) IC assembly, FinFETs (or Tri-gate FETs), and silicon-on-insulator (SOI) substrates. The … Continue reading

Posted in 2.5D, 20nm, 28nm, 32nm, 3D, EDA360, FDSOI, Silicon Realization, SoC, SoC Realization | Tagged , , , , , , | 1 Comment

Power, Performance, Cost. FDSOI lets you pick any three. Want proof? How about an ARM Cortex-M0 processor core example?

Last week, the first session of the International SoC Conference focused on FDSOI (fully depleted silicon-on-insulator) IC fabrication. Now if your thinking resembles mine before I watched this presentation, you think that FDSOI is an advanced IC-fabrication process that gives … Continue reading

Posted in 20nm, ARM, Cortex-M0, FDSOI, Silicon Realization, SoC, SoC Realization | Tagged , , , , | Leave a comment