Tag Archives: 19nm

SanDisk shows 128Gbit, 3-level cell NAND Flash memory chip at ISSCC. Is 20nm (or 19nm) here, so soon?

I’ve just posted a blog entry in the Denali Memory Report on an important NAND Flash memory announcement by SanDisk. Please check it out. http://j.mp/A6wAju

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Toshiba, SanDisk break 20nm barrier with 19nm NAND Flash

Memories now drive process technology and NAND Flash is the current main driver. So it’s no surprise that NAND Flash memories are the first to be produced at a process node below 20nm, which is precisely what Toshiba and SanDisk … Continue reading

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