Tag Archives: Multiple patterning

5-minute, 20nm Q&A. All you need to know in 5 minutes.

What are the key advantages of moving to 20nm? There are three primary reasons why we are seeing more system and semiconductor companies consider 20nm: performance, power, and area (PPA). Essentially, this is a “next-node” answer, which is still as … Continue reading

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20nm design: What have we learned so far?

Even if you are not currently considering 20nm design, you owe it to yourself to download and read a new 9-page White Paper titled “A Call to Action: How 20nm Will Change IC Design” to learn about some tectonic shifts … Continue reading

Posted in 20nm, 28nm, AMS, Analog, ARM, Design Abstraction, EDA360, Silicon Realization, Verification | Tagged , , , , , , , | 1 Comment

3D Thursday: My breakfast with IBM’s Gary Patton leads to a discussion of 20nm and 14nm IC design

Yesterday I moderated a panel on 2(x)nm success at DAC and one of the panelists was Dr. Gary Patton, VP of IBM’s Semiconductor Research and Development Center in East Fishkill, NY. I’ve heard Dr. Patton speak before and he knows … Continue reading

Posted in 14nm, 20nm, 28nm, Double Patterning, EDA360, EUV, Silicon Realization, SoC, SoC Realization | Tagged , , , , , , , | Leave a comment

FREE Webinar on the Challenges of 20nm design. Second in a 3-part series from Cadence

The second of a series of three Cadence Webinars on 20nm design is now archived and available for viewing if you missed the live event. You can read about this Webinar in Richard Goering’s blog (“Cadence, Samsung Detail 20nm RTL-to-GDSII … Continue reading

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