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Top Posts
- A head-to-head comparison of the ARM Cortex-M4 and –M0 processor cores by Jack Ganssle
- 3-processor SoC for digital still cameras incorporates an ARM 1136J-S RISC processor core plus separate image and video processors
- 3D Thursday: Micron’s 3D Hybrid Memory Cube delivers more DRAM bandwidth at lower power and in a smaller form factor using TSVs
- Collaboration is key to making DFM work at 28nm and below
- 3D Thursday: A look at some genuine 3D NAND cells, courtesy of Micron
- Friday Video: How many hardware/software integration lessons can you absorb in 34 minutes?
- The DDR4 SDRAM spec and SoC design. What do we know now?
- Clock Concurrent Optimization: The Primer to the Primer—OR—Want to overcome some major functional hurdles to Silicon Realization and save a lot of power on your SoC at the same time?
- Intel’s Knut Grimsrud explains how to get another 20x improvement in SSD performance
- Where is the mainstream IC process technology today? 28nm? 40nm? 65nm?
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Tag Archives: parasitic
Scaling the peaks to look at the 14nm cliff, Part 2: Tom Beckley from Cadence explains how we’re getting to 20nm and then on to 14nm and 10nm
This week at the ISQED Symposium in Silicon Valley, Tom Beckley who is the Senior VP of R&D for Custom IC and Signoff at Cadence opened the conference with a keynote covering the industry’s challenges and progress at 20nm and … Continue reading
Posted in 10nm, 14nm, 20nm, 28nm, Design Abstraction, Design Intent, DFM, Double Patterning, EDA360, IBM, Silicon Realization
Tagged 10nm, 14nm, 20nm, 28nm, extraction, FinFET, ISQED, layout, parasitic
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